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JANTX2N6764

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JANTX2N6764

MOSFET N-CH 100V 38A TO3

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTX2N6764 is an N-Channel Power MOSFET designed for demanding applications requiring high reliability. This through-hole component, housed in a TO-3 package (TO-204AE), offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 38A at 25°C (Tc). Key electrical parameters include a maximum On-Resistance (Rds On) of 65mOhm at 38A and 10V, and a Gate Charge (Qg) of 125nC at 10V. The device features a maximum Gate-to-Source Voltage (Vgs) of ±20V and a typical Threshold Voltage (Vgs(th)) of 4V at 250µA. With a maximum power dissipation of 150W (Tc) and an operating temperature range of -55°C to 150°C, the JANTX2N6764 is qualified to MIL-PRF-19500/543, making it suitable for military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
QualificationMIL-PRF-19500/543

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