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JANTX2N6762

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JANTX2N6762

MOSFET N-CH 500V 4.5A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTX2N6762 is a high-reliability N-Channel Power MOSFET designed for demanding applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5 A at 25°C. The JANTX2N6762 is qualified to MIL-PRF-19500/542, signifying its suitability for military and aerospace environments. It offers a maximum on-resistance (Rds On) of 1.8 Ohms at 4.5 A and 10 V gate-source voltage. The device is packaged in a TO-204AA (TO-3) through-hole package, providing robust thermal performance with a power dissipation of 75 W at the case temperature. Key parameters include a gate charge (Qg) of 40 nC at 10 V and a gate-source breakdown voltage of ±20V. The threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. This MOSFET is utilized in power switching, motor control, and high-voltage power supply designs.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs1.8Ohm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
QualificationMIL-PRF-19500/542

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