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JANTX2N6760

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JANTX2N6760

MOSFET N-CH 400V 5.5A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTX2N6760 is a high-reliability N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 5.5A at 25°C (Tc). With a low on-resistance (Rds On) of 1.22 Ohm at 5.5A and 10V Vgs, it offers efficient power handling. The JANTX2N6760 is qualified to MIL-PRF-19500/542, indicating its suitability for military and aerospace environments. It is housed in a TO-204AA (TO-3) through-hole package, providing robust thermal performance with power dissipation capabilities of 4W (Ta) and 75W (Tc). Gate charge is specified at 39 nC maximum at 10V Vgs, and the device supports a Vgs range of ±20V. This MOSFET is commonly utilized in power supply units, motor control, and high-temperature systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs1.22Ohm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
QualificationMIL-PRF-19500/542

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