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JANTX2N6758

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JANTX2N6758

MOSFET N-CH 200V 9A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTX2N6758 is an N-Channel MOSFET designed for high-reliability applications. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 9A at 25°C (Tc). The Rds On is specified at a maximum of 490mOhm at 9A and 10V gate drive. With a gate charge (Qg) of 39nC at 10V, it offers efficient switching characteristics. The JANTX2N6758 utilizes Metal Oxide technology and is packaged in a TO-204AA (TO-3) through-hole configuration. Power dissipation is rated at 4W (Ta) and 75W (Tc). This component adheres to MIL-PRF-19500/542 qualification, indicating its suitability for demanding military and aerospace environments, as well as industrial power control applications. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs490mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
QualificationMIL-PRF-19500/542

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