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JANSR2N7389U

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JANSR2N7389U

MOSFET P-CH 100V 6.5A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANSR2N7389U is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) rating of 6.5A at 25°C. The Rds On is specified at a maximum of 350mOhm under 6.5A and 12V gate drive. With a maximum power dissipation of 25W (Tc), this MOSFET is suitable for high-power switching and control functions. It is qualified to MIL-PRF-19500/630, indicating its suitability for military and aerospace environments. The device is housed in an 18-ULCC surface mount package. Key parameters include a Gate Charge (Qg) of 45nC at 12V and a threshold voltage (Vgs(th)) of 4V at 1mA. This component is commonly utilized in defense and space systems requiring robust performance and reliability.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs350mOhm @ 6.5A, 12V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 12 V
QualificationMIL-PRF-19500/630

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