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JANSR2N7389

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JANSR2N7389

MOSFET P-CH 100V 6.5A TO205AF

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANSR2N7389 is a P-Channel MOSFET designed for high-reliability applications. This through-hole component, packaged in a TO-205AF (TO-39) metal can, offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C (Tc). With a maximum power dissipation of 25W (Tc) and a low Rds On of 350mOhm at 6.5A and 12V gate drive, it provides efficient switching. The device features a gate charge (Qg) of 45 nC at 12V and a gate-source threshold voltage (Vgs(th)) of 4V at 1mA. Compliant with MIL-PRF-19500/630, this military-grade MOSFET is suitable for demanding environments in aerospace, defense, and industrial sectors. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs350mOhm @ 6.5A, 12V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-205AF (TO-39)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 12 V
QualificationMIL-PRF-19500/630

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