JANSR2N7380
MOSFET N-CH 100V 14.4A TO257Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANSR2N7380 is an N-Channel MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 14.4A at 25°C (Tc). The device offers a low on-resistance of 200mOhm maximum at 14.4A and 12V gate drive. With a maximum gate charge of 40nC at 12V, it ensures efficient switching characteristics. Power dissipation is rated at 2W (Ta) and 75W (Tc). The TO-257 package facilitates through-hole mounting, and the component operates across a temperature range of -55°C to 150°C (TJ). This device is qualified to MIL-PRF-19500/614, indicating its suitability for military and high-reliability applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 14.4A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-257 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 12 V |
| Qualification | MIL-PRF-19500/614 |
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