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JANSR2N7380

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JANSR2N7380

MOSFET N-CH 100V 14.4A TO257

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANSR2N7380 is an N-Channel MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 14.4A at 25°C (Tc). The device offers a low on-resistance of 200mOhm maximum at 14.4A and 12V gate drive. With a maximum gate charge of 40nC at 12V, it ensures efficient switching characteristics. Power dissipation is rated at 2W (Ta) and 75W (Tc). The TO-257 package facilitates through-hole mounting, and the component operates across a temperature range of -55°C to 150°C (TJ). This device is qualified to MIL-PRF-19500/614, indicating its suitability for military and high-reliability applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-257-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.4A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 14.4A, 12V
FET Feature-
Power Dissipation (Max)2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-257
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 12 V
QualificationMIL-PRF-19500/614

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