JANSR2N7269
MOSFET N-CH 200V 26A TO254AAManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANSR2N7269 is an N-Channel MOSFET designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 26 A at 25°C (Tc). The Rds On is specified at a maximum of 110 mOhm at 26 A and 12 V gate-source voltage. With a maximum power dissipation of 150 W (Tc) and a gate charge of 170 nC at 12 V, this device is suitable for demanding environments. The JANSR2N7269 is housed in a TO-254AA package, designed for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This device meets MIL-PRF-19500/603 qualification, indicating its suitability for military and aerospace applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 26A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-254AA |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 12 V |
| Qualification | MIL-PRF-19500/603 |
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