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JANSR2N7261U

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JANSR2N7261U

MOSFET N-CH 100V 8A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANSR2N7261U is an N-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8A at 25°C with a typical Rds(on) of 185mOhm at 8A and 12V Vgs. The maximum power dissipation is 25W (Tc). With a gate charge (Qg) of 50 nC at 12V Vgs and a gate-source breakdown voltage (Vgs(max)) of ±20V, this MOSFET offers efficient switching characteristics. The threshold voltage (Vgs(th)) is 4V at 1mA. Qualified to MIL-PRF-19500/601 and designated as Military grade, it operates across a broad temperature range of -55°C to 150°C. The component is housed in an 18-ULCC (9.14x7.49) surface mount package, supplied in trays. This MOSFET is suitable for use in defense and aerospace sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs185mOhm @ 8A, 12V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 12 V
QualificationMIL-PRF-19500/601

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