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JAN2N6901

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JAN2N6901

MOSFET N-CH 100V 1.69A TO205AF

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JAN2N6901 is an N-Channel MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 1.69A at 25°C. The device exhibits a maximum Rds On of 1.4 Ohms at 1.07A and 5V, with a typical gate charge of 5 nC at 5V. With a power dissipation capability of 8.33W (Tc), it operates across a temperature range of -55°C to 150°C (TJ). The JAN2N6901 is packaged in a TO-205AF (TO-39) metal can, suitable for through-hole mounting. This MOSFET is qualified to MIL-PRF-19500/570, indicating its suitability for military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.69A (Tc)
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.07A, 5V
FET Feature-
Power Dissipation (Max)8.33W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-205AF (TO-39)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 5 V
QualificationMIL-PRF-19500/570

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