JAN2N6898
MOSFET P-CHANNEL 100V 25A TO3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JAN2N6898 is a P-Channel MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 25A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 200mOhm at 15.8A and 10V gate-source voltage. With a maximum power dissipation of 150W (Tc), it is suitable for high-power switching and amplification tasks. The component operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-204AA (TO-3) format, this military-grade MOSFET is utilized in aerospace, defense, and industrial power control systems. Input capacitance (Ciss) is rated at a maximum of 3000 pF at 25V. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA drain current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 15.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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