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JAN2N6898

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JAN2N6898

MOSFET P-CHANNEL 100V 25A TO3

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6898 is a P-Channel MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 25A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 200mOhm at 15.8A and 10V gate-source voltage. With a maximum power dissipation of 150W (Tc), it is suitable for high-power switching and amplification tasks. The component operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-204AA (TO-3) format, this military-grade MOSFET is utilized in aerospace, defense, and industrial power control systems. Input capacitance (Ciss) is rated at a maximum of 3000 pF at 25V. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA drain current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 15.8A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V

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