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JAN2N6849U

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JAN2N6849U

MOSFET P-CH 100V 6.5A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6849U is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 6.5A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 320mOhm at 6.5A and 10V gate-source voltage. With a gate charge (Qg) of 34.8 nC (max) at 10V, it offers efficient switching characteristics. The JAN2N6849U is qualified to MIL-PRF-19500/564, indicating military-grade performance. It is housed in an 18-ULCC surface mount package (9.14x7.49) and operates within an extended temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 800mW (Ta) and 25W (Tc). This MOSFET is suitable for use in defense and aerospace systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs320mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs34.8 nC @ 10 V
QualificationMIL-PRF-19500/564

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