JAN2N6849U
MOSFET P-CH 100V 6.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JAN2N6849U is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 6.5A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 320mOhm at 6.5A and 10V gate-source voltage. With a gate charge (Qg) of 34.8 nC (max) at 10V, it offers efficient switching characteristics. The JAN2N6849U is qualified to MIL-PRF-19500/564, indicating military-grade performance. It is housed in an 18-ULCC surface mount package (9.14x7.49) and operates within an extended temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 800mW (Ta) and 25W (Tc). This MOSFET is suitable for use in defense and aerospace systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Qualification | MIL-PRF-19500/564 |
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