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JAN2N6849

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JAN2N6849

MOSFET P-CH 100V 6.5A TO39

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6849 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C. This through-hole component, housed in a TO-39 (TO-205AF Metal Can) package, offers a maximum Rds On of 320mOhm at 6.5A and 10V gate drive. The device features a gate charge of 34.8 nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 800mW (Ta) and 25W (Tc). Qualified to MIL-PRF-19500/564, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in demanding applications such as aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs320mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-39
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs34.8 nC @ 10 V
QualificationMIL-PRF-19500/564

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