JAN2N6849
MOSFET P-CH 100V 6.5A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JAN2N6849 is a P-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C. This through-hole component, housed in a TO-39 (TO-205AF Metal Can) package, offers a maximum Rds On of 320mOhm at 6.5A and 10V gate drive. The device features a gate charge of 34.8 nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 800mW (Ta) and 25W (Tc). Qualified to MIL-PRF-19500/564, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in demanding applications such as aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Qualification | MIL-PRF-19500/564 |
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