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JAN2N6802

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JAN2N6802

MOSFET N-CH 500V 2.5A TO39

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6802 is an N-Channel MOSFET designed for high-reliability applications. This through-hole component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.5 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 1.6 Ohms at 2.5 A and 10 V, with a gate charge (Qg) of 33 nC at 10 V. The JAN2N6802 is qualified to MIL-PRF-19500/557, indicating its suitability for military-grade requirements. It offers a maximum power dissipation of 25 W (Tc) and 800 mW (Ta) and operates across an extended temperature range of -55°C to 150°C (TJ). Packaged in a TO-39 (TO-205AF Metal Can), this MOSFET is commonly utilized in defense and aerospace systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-39
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
QualificationMIL-PRF-19500/557

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