JAN2N6800
MOSFET N-CH 400V 3A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's JAN2N6800 is an N-Channel power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 3A at 25°C (Tc). The ON-resistance (Rds On) is specified at a maximum of 1.1 Ohm at 3A and 10V gate-source voltage. With a gate charge (Qg) of 34.75 nC at 10V, it offers efficient switching characteristics. The power dissipation is rated at 800mW (Ta) and 25W (Tc). This component is housed in a TO-39 (TO-205AF Metal Can) through-hole package, suitable for military-grade applications conforming to MIL-PRF-19500/557 qualification. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.75 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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