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JAN2N6800

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JAN2N6800

MOSFET N-CH 400V 3A TO39

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's JAN2N6800 is an N-Channel power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 3A at 25°C (Tc). The ON-resistance (Rds On) is specified at a maximum of 1.1 Ohm at 3A and 10V gate-source voltage. With a gate charge (Qg) of 34.75 nC at 10V, it offers efficient switching characteristics. The power dissipation is rated at 800mW (Ta) and 25W (Tc). This component is housed in a TO-39 (TO-205AF Metal Can) through-hole package, suitable for military-grade applications conforming to MIL-PRF-19500/557 qualification. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-39
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs34.75 nC @ 10 V
QualificationMIL-PRF-19500/557

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