JAN2N6798U
MOSFET N-CH 200V 5.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JAN2N6798U is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 5.5 A at 25°C (Tc). The Rds On (Max) is specified at 420 mOhm at 5.5 A and 10 V gate drive. With a maximum gate charge (Qg) of 42.07 nC at 10 V, it offers efficient switching characteristics. The device is rated for a maximum power dissipation of 800 mW (Ta) and 25 W (Tc). Packaged in an 18-ULCC (9.14x7.49) surface mount configuration, the JAN2N6798U operates across an extended temperature range of -55°C to 150°C (TJ) and meets MIL-PRF-19500/557 qualification. This MOSFET is suitable for use in high-reliability military and aerospace systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 42.07 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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