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JAN2N6796U

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JAN2N6796U

MOSFET N-CH 100V 8A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's JAN2N6796U is an N-channel MOSFET designed for demanding applications. This MIL-PRF-19500/557 qualified component features a 100V drain-to-source voltage and a continuous drain current of 8A at 25°C (Tc). The device offers a low on-resistance of 195mOhm maximum at 8A and 10V Vgs. With a maximum gate charge of 28.51 nC at 10V, it facilitates efficient switching. The JAN2N6796U is packaged in an 18-ULCC (9.14x7.49) surface-mount configuration. Power dissipation is rated at 800mW (Ta) and 25W (Tc). Operating temperature ranges from -55°C to 150°C. This component is suitable for use in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs195mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs28.51 nC @ 10 V
QualificationMIL-PRF-19500/557

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