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JAN2N6796

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JAN2N6796

MOSFET N-CH 100V 8A TO39

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JAN2N6796 is an N-Channel power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8A at 25°C (Tc). Featuring a low on-resistance of 195mOhm at 8A and 10V Vgs, it ensures efficient power transfer. The device is qualified to MIL-PRF-19500/557, indicating its suitability for military and high-reliability applications. Packaged in a TO-39 (TO-205AF Metal Can) through-hole configuration, it supports power dissipation of 25W (Tc) and 800mW (Ta). Key electrical parameters include a gate charge of 28.51 nC at 10V Vgs and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is utilized in industries requiring robust power switching and control, such as aerospace and defense.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs195mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-39
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs28.51 nC @ 10 V
QualificationMIL-PRF-19500/557

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