JAN2N6796
MOSFET N-CH 100V 8A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation JAN2N6796 is an N-Channel power MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8A at 25°C (Tc). Featuring a low on-resistance of 195mOhm at 8A and 10V Vgs, it ensures efficient power transfer. The device is qualified to MIL-PRF-19500/557, indicating its suitability for military and high-reliability applications. Packaged in a TO-39 (TO-205AF Metal Can) through-hole configuration, it supports power dissipation of 25W (Tc) and 800mW (Ta). Key electrical parameters include a gate charge of 28.51 nC at 10V Vgs and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is utilized in industries requiring robust power switching and control, such as aerospace and defense.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.51 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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