JAN2N6788
MOSFET N-CH 100V 6A TO39Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation JAN2N6788 is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6A at 25°C (Tc). The Rds On is specified at a maximum of 350mOhm at 6A and 10V, with a gate charge (Qg) maximum of 18 nC at 10V. Power dissipation is rated at 800mW (Tc). This device utilizes Metal Oxide technology and is housed in a TO-39 (TO-205AF Metal Can) through-hole package. The JAN2N6788 meets MIL-PRF-19500/555 qualification and is suitable for operation across a temperature range of -55°C to 150°C (TJ). Industries leveraging this component include aerospace and defense.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Qualification | MIL-PRF-19500/555 |
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