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JAN2N6770

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JAN2N6770

MOSFET N-CH 500V 12A TO204AE

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6770 is an N-Channel MOSFET designed for high-reliability applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 500mOhm at 12A and 10V. With a maximum gate charge (Qg) of 120 nC at 10V, it is suitable for demanding switching applications. The TO-204AE (TO-3) package, suitable for through-hole mounting, provides robust thermal performance with a power dissipation of 150W at 25°C (Tc) and 4W at 25°C (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this device is qualified to MIL-PRF-19500/543, indicating its suitability for military and aerospace industries. The maximum gate-source breakdown voltage is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AE (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
QualificationMIL-PRF-19500/543

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