JAN2N6770
MOSFET N-CH 500V 12A TO204AEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JAN2N6770 is an N-Channel MOSFET designed for high-reliability applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 500mOhm at 12A and 10V. With a maximum gate charge (Qg) of 120 nC at 10V, it is suitable for demanding switching applications. The TO-204AE (TO-3) package, suitable for through-hole mounting, provides robust thermal performance with a power dissipation of 150W at 25°C (Tc) and 4W at 25°C (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this device is qualified to MIL-PRF-19500/543, indicating its suitability for military and aerospace industries. The maximum gate-source breakdown voltage is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-204AE (TO-3) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Qualification | MIL-PRF-19500/543 |
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