JAN2N6768
MOSFET N-CH 400V 14A TO204AEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation JAN2N6768 is an N-Channel power MOSFET designed for high-reliability applications. This device features a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 14A (Tc) at 25°C. The Rds On is specified at a maximum of 400mOhm at 14A, 10V. With a gate charge (Qg) of 110 nC @ 10V, it offers efficient switching characteristics. The power dissipation is rated at 4W (Ta) and 150W (Tc). This component is manufactured using MOSFET technology and is housed in a TO-204AE package for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). Qualified to MIL-PRF-19500/543 and designated as Military grade, the JAN2N6768 is suitable for demanding industrial, defense, and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Qualification | MIL-PRF-19500/543 |
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