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JAN2N6768

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JAN2N6768

MOSFET N-CH 400V 14A TO204AE

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JAN2N6768 is an N-Channel power MOSFET designed for high-reliability applications. This device features a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 14A (Tc) at 25°C. The Rds On is specified at a maximum of 400mOhm at 14A, 10V. With a gate charge (Qg) of 110 nC @ 10V, it offers efficient switching characteristics. The power dissipation is rated at 4W (Ta) and 150W (Tc). This component is manufactured using MOSFET technology and is housed in a TO-204AE package for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). Qualified to MIL-PRF-19500/543 and designated as Military grade, the JAN2N6768 is suitable for demanding industrial, defense, and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
QualificationMIL-PRF-19500/543

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