JAN2N6764
MOSFET N-CH 100V 38A TO204AEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JAN2N6764 is an N-Channel MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 38A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 65mOhm at 38A and 10V, with a gate drive voltage of 10V. Key parameters include a maximum Gate Charge (Qg) of 125 nC at 10V and a maximum Gate-Source Voltage (Vgs) of ±20V. Power dissipation is rated at 4W (Ta) and 150W (Tc). The JAN2N6764 is housed in a TO-204AE package for through-hole mounting. This component meets MIL-PRF-19500/543 qualification and is suitable for demanding military and aerospace applications requiring robust performance and reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Qualification | MIL-PRF-19500/543 |
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