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JAN2N6764

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JAN2N6764

MOSFET N-CH 100V 38A TO204AE

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6764 is an N-Channel MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 38A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 65mOhm at 38A and 10V, with a gate drive voltage of 10V. Key parameters include a maximum Gate Charge (Qg) of 125 nC at 10V and a maximum Gate-Source Voltage (Vgs) of ±20V. Power dissipation is rated at 4W (Ta) and 150W (Tc). The JAN2N6764 is housed in a TO-204AE package for through-hole mounting. This component meets MIL-PRF-19500/543 qualification and is suitable for demanding military and aerospace applications requiring robust performance and reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
QualificationMIL-PRF-19500/543

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