Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

JAN2N6756

Banner
productimage

JAN2N6756

MOSFET N-CH 100V 14A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JAN2N6756 is an N-Channel power MOSFET featuring a 100V drain-source breakdown voltage and a continuous drain current of 14A at 25°C (Tc). This device, packaged in a TO-204AA (TO-3) metal can, offers a maximum on-resistance of 210mOhm at 14A and 10V Vgs. It supports a gate drive voltage up to 10V for optimal Rds(on) performance and has a maximum gate-source voltage of ±20V. The JAN2N6756 exhibits a gate charge of 35nC (max) at 10V Vgs. Power dissipation is rated at 4W (Ta) and 75W (Tc). This component is qualified to MIL-PRF-19500/542, indicating its suitability for demanding military applications. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs210mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
QualificationMIL-PRF-19500/542

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APTM20SKM05G

MOSFET N-CH 200V 317A SP6

product image
APT60M75JVFR

MOSFET N-CH 600V 62A ISOTOP

product image
JANTX2N6796U

MOSFET N-CH 100V 8A 18ULCC