APTM50UM19SG
MOSFET N-CH 500V 163A MODULEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Microsemi Corporation APTM50UM19SG is a high-performance N-Channel MOSFET module designed for demanding power applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 163 A at 25°C, with a maximum power dissipation of 1136 W (Tc). The Rds On is specified at a maximum of 19 mOhm at 81.5 A and 10 V, supported by a Gate Charge (Qg) of 492 nC at 10 V and an Input Capacitance (Ciss) of 22400 pF at 25 V. It operates with a drive voltage of 10V and a maximum Gate-Source Voltage (Vgs) of ±30V. The APTM50UM19SG utilizes MOSFET technology and is housed in a robust J3 Module package for chassis mounting. Its operating temperature range is -40°C to 150°C (TJ). This module is suitable for use in industrial power supplies, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | J3 Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 163A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 81.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1136W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 492 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22400 pF @ 25 V |
Request a Quote
Clients Also Buy
APTM20SKM05G
MOSFET N-CH 200V 317A SP6
JANTX2N6796U
MOSFET N-CH 100V 8A 18ULCC
APT20M38BVFRG
MOSFET N-CH 200V 67A TO247
