APTM20UM09SG
MOSFET N-CH 200V 195A MODULEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APTM20UM09SG is a high-performance N-Channel MOSFET module designed for demanding power applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) capability of 195A at 25°C (Tc), with a maximum power dissipation of 780W (Tc). Optimized for efficiency, it offers a low on-resistance (Rds On) of 9mOhm at 74.5A and 10V gate drive. The internal gate charge (Qg) is a maximum of 217 nC at 10V, and input capacitance (Ciss) is 12300 pF at 25V. The APTM20UM09SG is chassis mountable, utilizing the J3 Module package, and operates across a temperature range of -40°C to 150°C (TJ). This device is suitable for various industrial sectors including electric vehicle powertrains, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | J3 Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 74.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 217 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12300 pF @ 25 V |
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