APTM20UM05SG
MOSFET N-CH 200V 317A MODULEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APTM20UM05SG is an N-Channel Power MOSFET module designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 317 A at 25°C (Tc), with a maximum power dissipation of 1136 W (Tc). The low on-resistance (Rds On) of 5 mOhm at 158.5 A and 10 V gate drive voltage makes it suitable for demanding power conversion and control circuits. Key parameters include a Gate Charge (Qg) of 448 nC at 10 V and Input Capacitance (Ciss) of 27400 pF at 25 V. This chassis mount module operates within a temperature range of -40°C to 150°C (TJ). The APTM20UM05SG is utilized in industries such as industrial power supplies, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | J3 Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 317A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 158.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1136W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 448 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27400 pF @ 25 V |
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