APTM20SKM05G
MOSFET N-CH 200V 317A SP6Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APTM20SKM05G is an N-Channel Power MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) rating of 317 A at 25°C. The Rds On is specified at a maximum of 6 mOhm at 158.5 A and 10 V gate drive. With a maximum power dissipation of 1136 W (Tc) and a gate charge (Qg) of 448 nC at 10 V, this MOSFET is suitable for demanding power conversion and control systems. It utilizes Metal Oxide technology and is presented in a Chassis Mount SP6 package. This device is commonly employed in industrial power supplies, electric vehicle powertrains, and renewable energy systems. Operating temperature ranges from -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 317A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 158.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1136W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 448 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27400 pF @ 25 V |
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