APTM120UM95FAG
MOSFET N-CH 1200V 103A SP6Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APTM120UM95FAG is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 103 A at 25°C, with a maximum power dissipation of 2272 W at the case temperature. The APTM120UM95FAG exhibits a low on-resistance (Rds On) of 114 mOhm at 51.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 1122 nC and input capacitance (Ciss) of 30900 pF at 25 V. Engineered with Metal Oxide technology, it offers a gate-source voltage (Vgs) range of ±30 V and a threshold voltage (Vgs(th)) of 5 V at 15 mA. The device is housed in an SP6 package for chassis mounting and operates within a temperature range of -40°C to 150°C (TJ). This MOSFET is suitable for use in industrial power conversion, renewable energy systems, and electric vehicle power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 51.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2272W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 15mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 1122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30900 pF @ 25 V |