APTM120U10DAG
MOSFET N-CH 1200V 160A SP6Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APTM120U10DAG is an N-Channel Power MOSFET designed for high-power applications. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 160 A at 25°C (Tc), with a maximum power dissipation of 3290 W (Tc). The on-resistance (Rds On) is specified as a maximum of 120 mOhm at 58 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 1100 nC at 10 V and an input capacitance (Ciss) of 28900 pF at 25 V. The MOSFET is housed in an SP6 package, designed for chassis mounting, and operates within a temperature range of -40°C to 150°C (TJ). This component is suitable for use in industries such as industrial power, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3290W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 20mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 1100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28900 pF @ 25 V |
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