APTM120SK56T1G
MOSFET N-CH 1200V 18A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APTM120SK56T1G is a high-voltage N-Channel Power MOSFET designed for demanding applications requiring robust switching performance. This component features a Drain-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 390W (Tc). The APTM120SK56T1G offers a low on-resistance (Rds On) of 672mOhm at 14A and 10V, facilitated by a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 7736 pF at 25V. This MOSFET utilizes Metal Oxide technology and is housed in a Chassis Mount SP1 package, suitable for industrial power conversion, motor control, and renewable energy systems. The operating temperature range is -40°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 2.5mA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 672mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7736 pF @ 25 V |
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