APTM120SK15G
MOSFET N-CH 1200V 60A SP6Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APTM120SK15G is an N-Channel MOSFET designed for high-voltage, high-power applications. This electronic component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 60A at 25°C (Tc). With a maximum power dissipation of 1250W (Tc) and a low Rds On of 175mOhm at 30A and 10V, this device offers efficient power handling. The APTM120SK15G utilizes MOSFET (Metal Oxide) technology and is housed in an SP6 chassis mount package, suitable for demanding thermal management. Key parameters include a gate charge (Qg) of 748 nC at 10V and input capacitance (Ciss) of 20600 pF at 25V. The operating temperature range is -40°C to 150°C (TJ). This component is commonly found in power factor correction, industrial motor control, and high-voltage power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 748 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20600 pF @ 25 V |
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