APTM120DA56T1G
MOSFET N-CH 1200V 18A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APTM120DA56T1G is a high-voltage N-Channel MOSFET designed for demanding power applications. This component features a drain-to-source breakdown voltage of 1200 V and a continuous drain current capability of 18 A at 25°C. With a maximum power dissipation of 390 W (Tc), it is suitable for chassis mounting. The device exhibits a maximum on-resistance (Rds On) of 672 mOhm at 14 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 300 nC at 10 V and an input capacitance (Ciss) of 7736 pF at 25 V. Operating across a temperature range of -40°C to 150°C (TJ), this MOSFET is utilized in power factor correction, motor control, and uninterruptible power supply systems. It is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 672mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7736 pF @ 25 V |
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