APTM120DA15G
MOSFET N-CH 1200V 60A SP6Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APTM120DA15G is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 60 A at 25°C, with a maximum power dissipation of 1250 W. Its low on-resistance (Rds On) of 175 mOhm at 30 A and 10 V gate drive ensures efficient power transfer. The APTM120DA15G is housed in an SP6 chassis mount package, facilitating thermal management. Key parameters include a gate charge (Qg) of 748 nC and input capacitance (Ciss) of 20600 pF, both specified at 10 V and 25 V respectively. This device operates across a temperature range of -40°C to 150°C. Applications include power factor correction, uninterruptible power supplies (UPS), and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 748 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20600 pF @ 25 V |
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