APTM100U13SG
MOSFET N-CH 1000V 65A MODULEManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APTM100U13SG is an N-Channel MOSFET module designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 65 A at 25°C, with a maximum power dissipation of 1250 W. The APTM100U13SG exhibits a low on-resistance (Rds On) of 145 mOhm at 32.5 A and 10 V, and a gate charge (Qg) of 2000 nC at 10 V. It also has an input capacitance (Ciss) of 31600 pF at 25 V. The module is chassis mountable and operates across a temperature range of -40°C to 150°C. This component is utilized in various industrial sectors including renewable energy, electric vehicles, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | J3 Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 2000 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 31600 pF @ 25 V |
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