APTM100DA33T1G
MOSFET N-CH 1000V 23A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APTM100DA33T1G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 23A at 25°C (Tc). With a low on-resistance of 396mOhm at 18A and 10V (Vgs), it offers efficient power handling with a maximum power dissipation of 390W (Tc). Key parameters include a Gate Charge (Qg) of 305 nC at 10V and an Input Capacitance (Ciss) of 7868 pF at 25V. The APTM100DA33T1G is housed in a Chassis Mount SP1 package, suitable for applications in industrial power supplies, renewable energy systems, and electric vehicle power conversion. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 396mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7868 pF @ 25 V |
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