APTM100DA18CT1G
MOSFET N-CH 1000V 40A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APTM100DA18CT1G is a N-Channel POWER MOS 8™ MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 40A at 25°C (Tc). With a maximum power dissipation of 657W (Tc), it is suitable for demanding power conversion and control tasks. The on-resistance (Rds On) is specified at a maximum of 216mOhm at 33A and 10V gate drive. Key parameters include a gate charge (Qg) of 570 nC at 10V and input capacitance (Ciss) of 14800 pF at 25V. The APTM100DA18CT1G utilizes a chassis mount SP1 package, facilitating efficient thermal management. This component is commonly employed in industries such as industrial power supplies, renewable energy systems, and electric vehicle charging.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 216mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 657W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 25 V |
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