APTC90DAM60T1G
MOSFET N-CH 900V 59A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APTC90DAM60T1G is an N-Channel Power MOSFET from the CoolMOS™ series. This component features a 900 V breakdown voltage (Vdss) and a continuous drain current capability of 59 A at 25°C (Tc). The device offers a low on-resistance of 60 mOhm maximum at 52 A and 10 V (Id, Vgs), with a maximum power dissipation of 462 W (Tc). Key parameters include a gate charge (Qg) of 540 nC at 10 V and input capacitance (Ciss) of 13600 pF at 100 V. Designed for high-voltage applications, this MOSFET is suitable for use in power factor correction, uninterruptible power supplies (UPS), and industrial power supplies. It is supplied in a Chassis Mount SP1 package. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 462W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 6mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 540 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 100 V |
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