APTC90DAM60CT1G
MOSFET N-CH 900V 59A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation's APTC90DAM60CT1G is a 900V N-Channel MOSFET from the CoolMOS™ series. This component offers a continuous drain current of 59A at 25°C (Tc) and a maximum power dissipation of 462W (Tc). The drain to source voltage is rated at 900V, with a maximum Rds(on) of 60mOhm at 52A and 10V drive voltage. Key parameters include a gate charge of 540 nC at 10V and input capacitance of 13600 pF at 100V. The device features a chassis mount design in an SP1 package. Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, industrial motor control, and high-voltage switching applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 462W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 6mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 540 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 100 V |
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