APTC60DAM35T1G
MOSFET N-CH 600V 72A SP1Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation APTC60DAM35T1G is an N-Channel Power MOSFET, designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 72 A at 25°C (Tc), with a maximum power dissipation of 416 W (Tc). The on-resistance (Rds On) is specified at a maximum of 35 mOhm at 72 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 518 nC at 10 V and input capacitance (Ciss) of 14000 pF at 25 V. The device operates within a temperature range of -40°C to 150°C (TJ) and is housed in an SP1 package for chassis mounting. This MOSFET is suitable for use in power factor correction, motor control, and industrial power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 72A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 5.4mA |
| Supplier Device Package | SP1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 518 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000 pF @ 25 V |