APTC60DAM24CT1G
MOSFET N-CH 600V 95A SP4Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APTC60DAM24CT1G is a 600V N-Channel CoolMOS™ Power MOSFET. This device features a maximum continuous drain current of 95A at 25°C (Tc) and a maximum power dissipation of 462W (Tc). The low on-resistance is specified at 24mOhm at 47.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 14400 pF at 25V. The APTC60DAM24CT1G utilizes a metal-oxide semiconductor technology and is housed in a chassis mount SP4 package, supplied in bulk. This component is suitable for applications requiring high voltage and current handling, frequently found in power supply, motor control, and industrial automation systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 47.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 462W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 5mA |
| Supplier Device Package | SP4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 25 V |
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