APT9F100S
MOSFET N-CH 1000V 9A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT9F100S is an N-Channel Power MOSFET from the POWER MOS 8™ series. This component offers a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 9 A at 25°C (Tc). It features a low on-resistance (Rds On) of 1.6 Ohm maximum at 5 A and 10 V gate drive. The device has a maximum power dissipation of 337 W (Tc) and a gate charge (Qg) of 80 nC maximum at 10 V. Input capacitance (Ciss) is specified at 2606 pF maximum at 25 V. This MOSFET is designed for surface mounting in a TO-268-3, D3PAK package. It is suitable for applications requiring high voltage switching, including power supplies and industrial motor control. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 337W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2606 pF @ 25 V |
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