APT80SM120S
SICFET N-CH 1200V 80A D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT80SM120S is an N-Channel SiCFET designed for high-voltage, high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 625W (Tc). The on-resistance (Rds On) is rated at a maximum of 55mOhm at 40A and 20V Vgs. The APT80SM120S utilizes a D3PAK (TO-268-3) surface mount package, facilitating efficient thermal management. Operating temperature range is -55°C to 175°C (TJ). Key parameters include a maximum Gate Charge (Qg) of 235 nC at 20V Vgs and a threshold voltage (Vgs(th)) of 2.5V at 1mA. This SiC device is suitable for power factor correction, electric vehicle charging, industrial motor drives, and renewable energy inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
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