APT80SM120J
SICFET N-CH 1200V 51A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's APT80SM120J is an N-Channel SiCFET designed for high-voltage, high-current applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 51 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 55 mOhm maximum at 40 A and 20 V. With a maximum power dissipation of 273 W (Tc), it is suitable for demanding power conversion and management tasks. The SOT-227-4, miniBLOC package facilitates chassis mounting for efficient thermal management. Key parameters include a gate charge (Qg) of 235 nC at 20 V and a gate-source voltage (Vgs) range of +25V to -10V. This SiCFET is utilized in industries such as industrial power supplies, renewable energy, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 273W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
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