APT80SM120B
SICFET N-CH 1200V 80A TO247Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT80SM120B is an N-Channel SiCFET designed for high-voltage, high-current applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 80 A at 25°C. The APT80SM120B offers a low on-resistance (Rds On) of 55 mOhm at 40 A and 20 V, coupled with a maximum power dissipation of 555 W (Tc). The gate charge (Qg) is 235 nC at 20 V, and the device supports a gate-source voltage (Vgs) range of +25 V to -10 V. The threshold voltage (Vgs(th)) is 2.5 V at 1 mA. This SiCFET is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is utilized in power conversion systems, electric vehicle drivetrains, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 555W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
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