APT8024LVRG
MOSFET N-CH 800V 33A TO264Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS V® N-Channel power MOSFET, APT8024LVRG. This component features an 800 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 33 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 240 mOhms at 16.5 A and 10 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 425 nC maximum at 10 V and input capacitance (Ciss) of 7740 pF maximum at 25 V. The APT8024LVRG is housed in a TO-264-3, TO-264AA package with through-hole mounting. This MOSFET is suitable for applications in power supply and industrial motor control sectors.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | TO-264 [L] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 425 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7740 pF @ 25 V |
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