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APT8024LLLG

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APT8024LLLG

MOSFET N-CH 800V 31A TO264

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation APT8024LLLG is a high-performance N-Channel POWER MOS 7® MOSFET designed for demanding power applications. This component features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 31A at 25°C (Tc). With a low on-resistance (Rds On) of 240mOhm at 15.5A and 10V, it offers efficient power handling capabilities up to 565W (Tc). The device is packaged in a through-hole TO-264-3, TO-264AA configuration for robust mounting. Key electrical characteristics include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 4670 pF at 25V. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supply units, motor control, and industrial power systems.

Additional Information

Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Rds On (Max) @ Id, Vgs240mOhm @ 15.5A, 10V
FET Feature-
Power Dissipation (Max)565W (Tc)
Vgs(th) (Max) @ Id5V @ 2.5mA
Supplier Device PackageTO-264 [L]
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4670 pF @ 25 V

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