APT8018JN
MOSFET N-CH 800V 40A ISOTOPManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation POWER MOS IV® APT8018JN is an N-Channel enhancement mode MOSFET designed for high voltage applications. Featuring a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 40A at 25°C (Tc), this component offers substantial power handling capabilities with a maximum power dissipation of 690W (Tc). The device exhibits a low on-resistance (Rds On) of 180mOhm at 20A and 10V (Vgs), and a gate charge (Qg) of 700 nC at 10V. Its input capacitance (Ciss) is rated at 14000 pF at 25V. The APT8018JN is housed in an ISOTOP® SOT-227-4, miniBLOC package, facilitating chassis mounting for efficient thermal management. With an operating temperature range of -55°C to 150°C (TJ) and a maximum gate-source voltage (Vgs) of ±30V, this MOSFET is suitable for demanding power conversion and control circuits across various industrial sectors including power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS IV®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 690W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 700 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000 pF @ 25 V |
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