APT7F80K
MOSFET N-CH 800V 7A TO220Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation POWER MOS 8™ APT7F80K is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 7 A at 25°C, with a maximum power dissipation of 225 W. The APT7F80K offers a low on-resistance (Rds On) of 1.5 Ohm at 4 A and 10 V, enabled by its Metal Oxide technology. Key parameters include a gate charge (Qg) of 43 nC at 10 V and input capacitance (Ciss) of 1335 pF at 25 V. The device operates within a temperature range of -55°C to 150°C and is housed in a standard TO-220-3 through-hole package. This MOSFET is utilized in various power electronics applications, including power supplies and motor control systems.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | TO-220 [K] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1335 pF @ 25 V |
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