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APT70SM70S

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APT70SM70S

SICFET N-CH 700V 65A D3PAK

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation APT70SM70S is a N-Channel SiCFET designed for high-power applications requiring robust performance. This surface mount component features a drain-to-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 65 A at 25°C (Tc), with a maximum power dissipation of 220 W (Tc). The Rds On is specified at a maximum of 70 mOhm at 32.5 A and 20 V. Gate charge (Qg) is 125 nC at 20 V, and the maximum gate-source voltage (Vgs) is +25 V / -10 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a D3PAK (TO-268-3) for efficient thermal management. This component is commonly utilized in power factor correction, electric vehicle charging, and industrial power supplies.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 32.5A, 20V
FET Feature-
Power Dissipation (Max)220W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageD3PAK
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 20 V

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