APT70SM70J
SICFET N-CH 700V 49A SOT227Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation APT70SM70J is a SiCFET N-Channel power MOSFET designed for high-efficiency applications. This component features a Drain-to-Source Voltage (Vdss) of 700 V and a continuous drain current (Id) of 49 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 70 mOhm at 32.5 A and 20 V Vgs. Key characteristics include a gate charge (Qg) of 125 nC at 20 V and a maximum power dissipation of 165 W (Tc). The APT70SM70J is housed in a SOT-227-4 miniBLOC package, facilitating chassis mounting. Operating temperature range is -55°C to 175°C (TJ). This device is suitable for use in power conversion systems across various industries including industrial automation and electric vehicle charging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 32.5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 20 V |
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